Catalog > Semiconductors > Discrete Semiconductors > Transistors Bipolar (BJT) NPN Transistor Transistor N 200V 350V 1A 30/150 TOP66 Part No: TIP49 4.92 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Transistor Type NPN Collector Current (IC) (Max) 1 A Collector-Emitter Breakdown Voltage (VCEO) (Max) 350 V DC Current Gain (hFE) (Min) @ IC, VCE 30 @ 300 mA, 10 V Collector Cutoff Current (Max) 1 mA VCE Saturation (Max) @ IB, IC 1 V @ 200 mA, 1 A Transition Frequency (fT) 10 MHz Power Dissipation (Max) 40 W Operating Temperature -65°C to +150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3