Catalog > Semiconductors > Discrete Semiconductors > Transistors P 100V 20A DARLGTN 100W TO3P Transistor P 100V 20A DARLGTN 100W TO3P Part No: 2SB1079 25.88 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Polarity : PNP Darlington Package : TO‑3P Max Collector‑Base Voltage (VCBO) : –100 V Max Collector‑Emitter Voltage (VCEO) –80 V (Hitachi); sustaining –100 V (ISC) Max Emitter‑Base Voltage (VEBO) : –5 V Max Collector Current (IC) : –20 A Max Collector Power Dissipation (Pc) : 100 W DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A hFE Max : ~20 k (source: LittleDiode) Max Junction Temperature (Tj) : 175 °C