Catalog > Semiconductors > Discrete Semiconductors > Transistors N - Channel PowerMOS Transistor Transistor SIP MOS N-Channel 500V 4,5A TO220 Part No: IRF830 14.38 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Power Dissipation: 100 W Maximum Drain-Source Voltage: 500 V Maximum Gate-Source Voltage: 20 V Maximum Drain Current: 4.5 A Maximum Junction Temperature: 150 °C Electrical Characteristics Maximum Gate-Threshold Voltage: 4 V Total Gate Charge: 22 nC Rise Time: 8 nS Output Capacitance: 120 pF Maximum Drain-Source On-State Resistance: 1.5 Ohm Package: TO220