• Device Type: Dynamic Random Access Memory (DRAM)
• Memory Organization: 256K × 4 Bits
• Total Capacity: 1,048,576 Bits (1 Mbit)
• Package Type: Plastic DIP (P suffix)

Memory Characteristics

• Memory Size: 256K × 4 bits
• Total Capacity: 1 Mbit
• Technology: CMOS DRAM
• Fast Page Mode (FPM)
• Dynamic memory (refresh required)
• Multiplexed address bus architecture

Speed Grade

• -80 Suffix
  • Access Time: 80 ns maximum
  • Fast Page Mode operation for improved burst access performance

Electrical Characteristics

• Supply Voltage (VCC):
  • 5 V ±10%
  • Operating Range: 4.5 V to 5.5 V
• TTL-compatible inputs and outputs
• Low-power CMOS process

Addressing

• Multiplexed row/column addressing
• RAS (Row Address Strobe)
• CAS (Column Address Strobe)
• WE (Write Enable)
• Fast Page Mode supports multiple column accesses within the same row cycle

Package Information

• Package: PDIP
• Pin Count: 20 Pins
• Mounting Style: Through-Hole

Operating Temperature

• Commercial Range:
  • 0°C to +70°C