Catalog > Semiconductors > Discrete Semiconductors > Transistors Single N Channel HEXFET HEXFET Single N Channel HEXFET 1,3A 100V HEX-DIP Part No: IRFD120 52.61 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 1.3 A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10 V Rds On (Max) @ Id, Vgs 270 mΩ @ 780 mA, 10 V Vgs(th) (Max) @ Id 4 V @ 250 µA Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V Vgs (Max) ±20 V Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V Power Dissipation (Max) 1.3 W (Ta) Operating Temperature -55°C to 175°C (TJ) Mounting Type Through Hole Supplier Device Package 4-HVMDIP Package / Case 4-DIP (0.300", 7.62 mm)