| Channel Type |
N |
| Maximum Continuous Drain Current |
88 A |
| Maximum Drain Source Voltage |
100 V |
| Package Type |
TO-220AB |
| Mounting Type |
Through Hole |
| Pin Count |
3 |
| Maximum Drain Source Resistance |
10 mΩ |
| Channel Mode |
Enhancement |
| Maximum Gate Threshold Voltage |
4V |
| Minimum Gate Threshold Voltage |
2V |
| Maximum Power Dissipation |
200 W |
| Transistor Configuration |
Single |
| Maximum Gate Source Voltage |
-20 V, +20 V |
| Maximum Operating Temperature |
+175 °C |
| Length |
10.66mm |
| Width |
4.82mm |
| Transistor Material |
Si |
| Typical Gate Charge @ Vgs |
120 nC @ 10 V |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature |
-55 °C |
| Height |
9.02mm |
| Series |
HEXFET |