Catalog > Semiconductors > Discrete Semiconductors > Transistors Transistor Silicon NPN Transistor P 60V 50V 200MA 200MN X10 Transistor Part No: BC212B 0.94 ZAR inc for 1 Each (Quoting) Add to Cart Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE Specifications Maximum Collector Power Dissipation (Pc): 0.3 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0.2 A Max. Operating Junction Temperature (Tj): 150 °C Electrical Characteristics Transition Frequency (ft): 200 MHz Collector Capacitance (Cc): 9 pF Forward Current Transfer Ratio (hFE), MIN: 200