Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE
IGBT 600V 120A 60W TO247AB
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132.25
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ZAR
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inc
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for 1 Each
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N 160V 12A 120W 20MHZ TOP-3Fa
N 1200V 5A 50W TO3
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143.75
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ZAR
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inc
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for 1 Each
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N 200V 0.1A 7W 300MHZ TO-126
SIP MOS N-CH 55V 19A TO220 RDS= 0,10R
N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm
High Efficiency Synchronous Rectification SMPS D2PAK (7PIN) 40V 280A 380W
SIP MOS N-CH 40V 343A 1.7MOhm 375W TO220
SIP MOS N-CH 400V 6,5A 1R Max TO220 50/Tube
FET N-Channel 800V 9A 160W 900MR TO220
N-Channel Mosfet 75V 80A 45W TO220
MOS N-Channel 13A 600V 0,55R TO-247
BCD to Seven Segment Decoder/Driver
Voltage Regulator 6V 500mA TO220-5
P 100V 100V 15A 90W TO220
P 250V 250V 0MA 50MN TO126
P-Channel Enhancement Mode Power Mosfet , VDS=-100V , ID=-30A , Maximum Power Dissipation:120W , Temp Range:-55~175℃ , RDS(ON)<58mΩ , TO-252-2L
N 300V 300V 500MA 225MW HFE=40 SOT-23(3K/REEL)
P 30V 25V 100MA 240MN X10
MESFET, N-CH UHF/MICROWAVE FET = 6GHz 5V 100mA GaAs
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684.25
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ZAR
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inc
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for 1 Each
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IGBT 45A 1200V TO-247AC
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136.28
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ZAR
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inc
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for 1 Each
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IGBT with Diode 75A 600V TO-264AA
N 160V 10A 150W TOP3
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102.93
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ZAR
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inc
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for 1 Each
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Dual IGBT Module 150A 1200V - Package - 7DM3
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2 056.86
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ZAR
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inc
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for 1 Each
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Two Phase Boosted Voltage Generator TO92
PNP 60V 4.0A 100MHZ HFE 150 540MW SOT-23-3
Si PNP Lo-Pwr BJT 14PIN DIP
IGBT Module - N Channel - High Reliability. High Speed Low Loss 800A 3K3V
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7 423.25
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ZAR
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inc
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for 1 Each
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NPN/PNP DARLINGTON TRANSISTOR BUILT IN COMPENSATION DIODES -160V -15A 160W TO3P
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327.75
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ZAR
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inc
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for 1 Each
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TORROID 15VA-SEC 1X15V 1X1A PRI 230V-65X30( INCL MOUNTING KIT )
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241.50
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ZAR
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inc
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for 1 Each
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Triac 600V 16A IGT=30mA TO220
TRIAC 600V 4A IGT= 5MA TO126
TRIAC 800V 40A IGT= 30 MA TO-3P
Triac 800V 15A 50mA TO-220
TRIAC 15A 600V IGT = 50MA MAX TO220
TRIAC 600V 8A IGT=30MA TO220