Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE
S/MOS P -200V -150mA 1,0W
S/MOS N 50V 300mA 0,63W 3,5R TO92
P 300V 300V 1A 30/120 SOT23
P 12V 12V 200mA 30MN TO18
Transistor N 20V 15V 100MA 40MN TO18
Transistor N 20V 15V 100MA 40MN TO18
N 60V 25V 500MA 100MN TO39
Bipolar Transistor Amplifier/Switching NPN VcBo = 75, VcE0 =30, icMax = 500mA, Ptot = 800mW, Ft = 145Mhz, Hfe = 100 - 300, TO39 - 3 lead Metal Can
Bipolar Transistor General Purpose NPN VcBo = 40, VcE0 =20, icMax = 1A, Ptot = 800mW, Hfe = 60 - 142, Ft = 50Mhz, TO5 - 3 lead Metal Can
SI-N 120V 0.5A 0.8W 100MHz
N 400V 7A 10/150 TO3 Transistor
High-Voltage NPN Silicon Power Transistor
N 130V 60V 5A 15MN TO5 Transistor
N 750V 250V 6A 15/180 TO3
SI-N+D 1500V 8A 35W 0.6US
N 1500V 700V 5A 2,5MN TO3
SI-N+D 1500V 8A 45W 0.4us
N + D 1500/800V 10A 45W TO-3PFa
N 1500/800V 12A 45W TO-3PFa
N 400V 400V 10A 75MN TOP66
N 900V 400V 8A 60MX TOP3 Isolated
SI-N 1500V 2.5A 75W 0.9us
SI-N+D 1500V 8A 125W 0.7us
SI-N+D 1500V 8A 34W 0.7us
N-DARL+D 400V 8A 60W 0.35
N 400V 500V 15A 135W TO247
N Mosfet 200V 3,5A 90W 0,4R TO220AB
SI-N 1000V 15A 150W 0.8us
SI-N 1000V 15A 175W 0.8us
SIP MOS N 200V 13A 75W 0,20R
SIP MOS N 1000V 2,3A 75W 6,0R
SIP MOS N 400V 2,6A 40W 2,5R
TRANSISTOR PNP 50V 100MA 150MW EM3 PKG
TRANSISTOR PNP 50V 100MA 200MW UMT PKG
Digital Transistor NPN 100mA Resistance=47K TO-92
FRD Ultra Fast 200V 10A TO220 Common Anode
IGBT Module - N Channel - High Reliability. High Speed Low Loss 1200A 3K3V
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6 273.25
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ZAR
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inc
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for 1 Each
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