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FRD Ultra Fast 200V 10A TO220 Common Cathode
FRD Ultra Fast 200V 10A TO220 Common Anode
IGBT Module - N Channel - High Reliability. High Speed Low Loss 1200A 3K3V
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6Â 273.25
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ZAR
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inc
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for 1 Each
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P -40V -30V 500mA 678/246 TO92
N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor
P-50V 50V 150MA 60/600 TO92
N 250V 16A 15/60 250W TO-3
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125.06
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ZAR
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inc
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for 1 Each
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SI-P 400V 16A 250W 4MHz
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125.06
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ZAR
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inc
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for 1 Each
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P 100V 90V 30A 25/100 TO3
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172.50
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ZAR
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inc
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for 1 Each
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SI-N 300V 0.5A 20W VIDPOW
P 300V 300V 500MA 30MN TO126
Transistor Silicon PNP 150V 150V 500mA 20MN TO5
N 75V 40V 800mA 100MN SOT23 (SMD)
P 60V 60V 600MA 100MN SOT23 (SMD)
N 40V 40V 200MA 100MN SOT23 (SMD)
P 40V 40V 200MA 100MN SOT23 (SMD)
P 300V 300V 500MA 225MW HFE=40 SOT-23(3K/REEL)
Bipolar (BJT) NPN Transistor
Silicon Planar Epitaxial PNP General-Purpose Transistor
N 50V 30V 600MA 100MN TO92 Bipolar (BJT) NPN Transistor
Bipolar Transistor Amplifier/Switching NPN VcBo = 80, VcE0 =80, icMax = 500mA, Ptot = 625mW, Ft = 100Mhz, Hfe = 50, TO92